Si5511DC
Vishay Siliconix
P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
20
0.40
10
I D = 2.3 A
1
T J = 150 °C
0.32
T A = 125 °C
0.24
T J = 25 °C
0.1
0.16
T A = 25 °C
0.01
0.001
0.0 8
0.00
0.0
0.2
0.4
0.6
0. 8
1.0
1.2
1
2
3
4
5
1.3
1.2
V SD - So u rce-to-Drain V oltage ( V )
Source-Drain Diode Forward Voltage
50
40
V GS - Gate-to-So u rce V oltage ( V )
On-Resistance vs. Gate-to-Source Voltage
I D = 250 μ A
1.1
30
1.0
20
0.9
0. 8
0.7
10
0
- 50
- 25
0
25
50
75
100
125
150
10 -4
10 -3
10 -2
10 -1
1
10
10 2
10 3
T J - Temperat u re (°C)
Threshold Voltage
100
10
Limited b y R DS(on) *
10 ms
Time (s)
Single Pulse Power
1
0.1
0.01
0.001
0.1
* V GS
100 ms
1s
10 s
DC
T A = 25 °C
Single P u lse
1 10 100
V DS - Drain-to-So u rce V oltage ( V )
minim u m V GS at w hich R DS(on) is specified
Safe Operating Area, Junction-to-Case
Document Number: 73787
S10-0547-Rev. C, 08-Mar-10
www.vishay.com
9
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